Electron - phonon scattering rates in GaAs / A 1 GaAs 2 DEG samples below 0
نویسنده
چکیده
Abal~ct We have studied electron heating in a 2DEG in GaAs/AIGaAs heterojunctions below 0.5 IC The electron temperature was raised above the lattice temperature using Joule heat/n& Weak localiT~tion and the temperature-dependent sample resistance were used as thermometers for the electrons. The electron-phonon energy relaxation rate was found to be proportional to T s. We find that the relaxation rate increases with disorder in the system.
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